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1

A new model for the thermal oxidation kinetics of silicon

Edward H. Nicollian, A. Reisman

Journal:

Journal of Electronic Materials

Year:

1988

Language:

english

File:

PDF, 1.04 MB

english, 1988

2

Electrical characterization of defects created in the Si-SiO2system by ionizing radiation

Edward H. Nicollian

Journal:

Journal of Electronic Materials

Year:

1992

Language:

english

File:

PDF, 1018 KB

english, 1992

3

Resonant tunneling via microcrystalline-silicon quantum confinement

Ye, Qiu-yi, Tsu, Raphael, Nicollian, Edward H.

Journal:

Physical Review B

Year:

1991

Language:

english

File:

PDF, 287 KB

english, 1991

4

SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Resonant tunneling in microcrystalline silicon quantum box diode

Tsu, Raphael, Ye, Qui-Yi, Nicollian, Edward H., Razeghi, Manijeh

Year:

1991

Language:

english

File:

PDF, 135 KB

english, 1991

5

Laplace transform method of measuring the distribution of Si–SiO2 barrier heights: Implementation

Nicollian, Edward H., Babić, Davorin

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 1.26 MB

english, 1995

6

Laplace transform method of measuring the distribution of Si–SiO2 barrier heights: Basic principles

Babić, Davorin, Nicollian, Edward H.

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 1.35 MB

english, 1995

7

Passivation of defects in polycrystalline superlattices and quantum well structures

Tsu, Raphael, Nicollian, Edward H., Reisman, Arnold

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 550 KB

english, 1989

8

Accurate measurement of trivalent silicon interface trap density using small signal steady-state methods

Miller, Jimmie A., Blat, Catherine, Nicollian, Edward H.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 959 KB

english, 1989

9

The Profile of Electrically Active Phosphorus in Silicon after Thermal Oxidation

Nicollian, Edward H.

Journal:

Journal of The Electrochemical Society

Year:

1994

Language:

english

File:

PDF, 653 KB

english, 1994